Annealing of Quenched-in Defects in Ge Crystal : Dislocation density 10^4-10^5 etch-pits/cm^2
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1962-02-05
著者
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Suita Tokuo
Department Of Atomic Energy Engineering Faculty Of Engineering Osaka University
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Hiraki Akio
Department Of Nuclear Engineering College Of Engineering Osaka University
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