Crystal Growth of Boron Monophosphide from Cu-Fluxed Melt

スポンサーリンク

概要

• 論文の詳細を見る

• The optimum conditions for the crystal growth of boron monophosphide (BP) by using Cu-fluxed melt were determined in detail, and it was found that BP crystals were grown mainly by means of the temperature gradient produced by a furnace. The maximum size of the crystals thus grown was 4×3×0.2 mm^3. Also, BP crystals were successfully grown on a seed BP crystal placed at a low temperature region of the Cu-melt. The crystals grown from the Cu-fluxed melt were always n-type in contrast to the fact that the crystals grown from the Ni-fluxed melt were always p-type. Photoluminescence spectra observed in the crystals grown from the Cu-fluxed melt had essentially the same feature as those observed in the crystals grown from the Ni-fluxed melt. The emission bands shown in these spectra were concluded to be due to some impurity atoms other than Cu and Ni.

• 社団法人応用物理学会の論文
• 1977-09-05

著者

• IWAMI Motohiro

  Department of Electrical Engineering, Osaka University

• Kammura Wako

  Department Of Electrical Engineering Osaka University

• Kato Naoyuki

  Department Of Electrical Engineering Osaka University

• Iwami Motohiro

  Department Of Electrical Engineering Kyoto University:(present Address) Department Of Electrical Eng

• Kawabe Kazuo

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

関連論文

• Sputtering Yields of Si and Ni from the Ni_Si_x System Studied by Rutherford Backscattering Spectrometry
• Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar^+ Ion Bombardment
• Low Temperature Alloyed Contact Formation in Various Metal-Semiconductor Couples : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
• Si(LMM) Auger Electron Emission from Si Alloys by keV Ar_+ Ion Bombardment, New Effect and Application
• Auger and X-Ray Analyses of Iron-Oxide-Coated Si Photoelectrodes
• X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
• A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
• Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
• ELS Study of Amorphous Si(Substrate)-SiO_2(Film Overlayer) System with Varying Primary Electron Energy
• Electronic Energy States of Tungsten Dichalcogenides by Low Energy Electron Loss Spectroscopy Study
• Remarkable Angular and Temperature Dependence of the ESR Linewidth in Organic Ion-Radical Salts:3,3'-Diethy1-6,6'-Dimethyl-2,2'-Thiacyanine-[TCNQ]_2 and 1-Ethyl-3'-Methyl-2,2'-Quinoselenacyanine-[TCNQ]_2
• Crystal Growth of Boron Monophosphide from Cu-Fluxed Melt
• Low-Temperature Ti-Silicide Forming Reaction in Very Thin Ti-SiO_2/Si(111) Contact Systems
• Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide
• Preparation of a High Mobility Thin Film of Cd_3As_2
• Pleochroism in Aniline Hydro-Bromide and -Iodide
• Preparation of BaTiO_3 Single Crystals in Coal Gas Atmosphere
• Electric and Magnetic Properties of an Organic Ion-Radical Salt: 1,1'-Diethyl-2,2'-Cyanine-[TCNQ]_2
• Single-Photon Ionization in the Flash Photolysis of N,N,N′,N′-Tetramethyl-p-phenylenediamine in Solution

もっと見る 閉じる

スポンサーリンク