MIS Silicon Solar Cells with In_2O_3 Antireflective Coating
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-08-05
著者
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Tanaka Tetsuro
Department Of Electrical And Electronics Engineering Kagoshima University
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Matsunami Hiroyuki
Department Of Electronics Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsumoto Shigenori
Department Of Electronics Kyoto University
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Matsumoto Shigenori
Department Of Applied Physics School Of Engineering The University Of Tokyo
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Tanaka Tetsuro
Department Of Electronics Kyoto University
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Tanaka Tetsuro
Department Of Biopharmaceutics School Of Pharmacy Fukuyama University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
関連論文
- Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
- Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
- Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- Non-Ohmic and Oscillatory Behaviors at Strong Electric Field in Tellurium
- Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
- Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
- Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
- Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
- Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
- Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
- Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- Optical Energy Gap of the Mixed Crystal CdS_xTe_
- Phase Diagram of the CdS-CdTe Pseudobinary System
- Uptake of Pullulan in Cultured Rat Liver parenchymal Cells(Biopharmacy)
- Receptor Mediated Endocytosis and Cytotoxicity of Trandferrin-Mitomycin C Conjugate in the HepG2 Cell and Primary Cultured Rat Hepatocyte
- Intracellular Disposition and Cytotoxicity of Transferrin-Mitomycin C Conjugate in HL60 Cells as a Receptor-Mediated Drug Targeting System
- Polysaccharides as Drug Carriers : Biodisposition of Fluorescein-Labeled Dextrans in Mice
- Synthesis of Transferrin-Mitomycin C Conjugate as a Receptor-Mediated Drug Targeting System
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
- Anisotropic Piezoresistance of Cadmium Antimonide
- Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
- Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
- Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3)
- Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
- A Reproducible LPE Growth of High-Quality In_Ga_xP_As_y Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
- Se Film Piezoelectric Transducer Deposited on Te Crystal
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Transmission Electron Microscopic Study of the Surface and Interface of Carbonized-Layer/Si(100)
- Epitaxial Growth of Cd_xHg_Te
- Testing the Controllability of Discrete-Time Linear Systems with Input Constraints
- Positive Controllability Test of Discrete-Time Linear Systems
- Controllability of Multiple Input Discrete-Time Linear Systems with Positive Controls
- Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- SiO_2 Film Deposition by KrF Excimer Laser Irradiation
- Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
- Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I)
- Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition
- Plasma Etching of CVD Grown Cubic SiC Single Crystals
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Piezoelectric Properties of Se Film Deposited on Te Crystal
- Photo-Ionization of Aluminum Atoms by Vacuum Ultra Violet Light
- Evaluation of Child Care Practice Factors That Affect the Occurrence of Sudden Infant Death Syndrome : Interview Conducted by Public Health Nurses
- Composition Dependence of Inhomogeneous Hydrogen Bonding Structures in a-SiGe:H
- Lattice-Matched LPE Growth of In_Ga_xP_As_y Layers on (100) GaAs Substrates
- Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide
- Preparation of a High Mobility Thin Film of Cd_3As_2
- Solid-State Phase Transformation in Cubic Silicon Carbide
- Thermal Oxidation of SiC and Electrical Properties of Al-SiO_2-SiC MOS Structure
- The Electrooptic Effect in Cubic ZnSe at 10.6 μ
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells
- Epitaxial Growth of CdTe by a Close-Spaced Technique
- Ultrasonic Amplification in Tellurium
- Current Oscillation in Tellurium at High Electric Field
- Temperature Dependence of Nonlinear V-I Characteristic in Tellurium
- Electrical Properties of Undoped p-CdSb at Low Temperatures
- Negative Magnetoresistance in Ag Doped p-CdSb
- New Blue Photoluminescence of Ga-Doped 4H-SiC Grown from Si Melt
- Photoluminescence of 4H-SiC Single Crystals Grown from Si Melt
- Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method
- Defect Luminescence in SiC Light-Emitting Diodes
- Fundamental Properties of MIS Solar Cells : I-2: SILICON SOLAR CELLS (II)
- MIS Silicon Solar Cells with In_2O_3 Antireflective Coating
- Plasma-Grown Oxide on InP
- Piezoelectric Effects in Selenium Rectifiers
- Current Oscillation in Dark-Conductive CdS
- GaP/Si Heterojunction with Ohmic Conduction Fabricated by Wafer Fusion Technique
- Analysis of Electron Beam Induced Current Considering Sample Dimensions : Measurement of Diffusion Length and Surface Recombination Velocity