Solid-State Phase Transformation in Cubic Silicon Carbide
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概要
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The thermal stability of single crystalline 3C-SiC was investigated at temperatures from 1800 to 2400℃ in an Ar atmosphere, and a solid-state phase transformation from 3C-SiC to 6H-SiC was observed above 2150℃. Single crystals of 3C-SiC(100) grown on Si(100) were used as starting crystals after removing Si. Annealings were carried out with changing temperature, pressure and time. The change in the Si/C composition ratio of annealed samples was determined by Auger electron analysis. The polytypes of samples were examined by photoluminescence, Raman scattering, X-ray diffraction and reflection high-energy electron diffraction before and after annealing. The spatial distribution and depth profile of the phase-transformed 6H-SiC region in annealed samples were observed by means of Raman microscopy. The mechanism of 3C→6H phase transformation in SiC is discussed.
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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YOO Woo
Department of Electrical Engineering, Kyoto University
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Yoo Woo
Wafer Masters Inc.
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Yoo Woo
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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