Titanium Silicide Formation and Anneal Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
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概要
- 論文の詳細を見る
Titanium silicide formation and annealing processes were investigated as afunction of process temperature (600℃-850℃), Ti film thickness (27.5 nm-100 nm) and process time (45 s-87 s) using a susceptor-based low pressure rapid thermal processing (RTP) system. Highly reliable, low resistance, production worthy titanium silicide contact formation and annealing processes have been demonstrated. Excellent sheet resistance uniformity and repeatability have been demonstrated. The difference in wafer heating mechanism between the susceptor-based RTP and the lamp-based RTP systems and its implication to the process results were discussed. Power consumption and productivity were also described from the production point of view.
- 社団法人応用物理学会の論文
- 1999-03-15
著者
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Yoo W
Wafermasters Inc. Ca Usa
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Yoo Woo
Wafer Masters Inc.
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Yoo Woo
Mattson Technology Inc.
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Yoo Woo
Department Of Electrical Engineering Kyoto University
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Whitworth David
Mattson Technology Inc.
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ATANOS Ashur
Mattson Technology, Inc.
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Atanos A
Mattson Technology Inc.
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Atanos Ashur
Mattson Technology Inc.
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Yoo Woo
Wafer Masters, Inc.
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