Noncontact In-Line Monitoring of Ge Content and Thickness Variations of Epitaxial Si_<1-x>Ge_x Layers on Si(100) Using Polychromator-Based Multiwavelength Micro-Raman Spectroscopy
スポンサーリンク
概要
- 論文の詳細を見る
- 2010-10-25
著者
-
HARIMA Hiroshi
Kyoto Inst. of Technol., Fac. of Eng. & Des., Dept. of Electronics & Information Sci.
-
Kang Kitaek
WaferMasters, Inc.
-
Yoo Woo
WaferMasters, Inc.
-
Yoo Woo
Wafer Masters Inc.
-
Yoo Woo
Institute Of Microelectronics/a Star
-
Kang Kitaek
Wafer Masters Inc.
-
Harima Hiroshi
Kyoto Institute Of Technology
-
Tzeng Yu
Taiwan Semiconductor Manufacturing Co. Ltd.
-
KU Scott
Taiwan Semiconductor Manufacturing Co., Ltd.
-
CHANG Stock
Taiwan Semiconductor Manufacturing Co., Ltd.
-
YANG Chi
Taiwan Semiconductor Manufacturing Co., Ltd.
-
CHERN Chyi
Taiwan Semiconductor Manufacturing Co., Ltd.
-
LIN John
Taiwan Semiconductor Manufacturing Co., Ltd.
-
HASUIKE Noriyuki
Kyoto Institute of Technology
-
UEDA Takeshi
WaferMasters, Inc.
-
ISHIGAKI Toshikazu
WaferMasters, Inc.
-
Yang Chi
Taiwan Semiconductor Manufacturing Co. Ltd.
-
Chang Stock
Taiwan Semiconductor Manufacturing Co. Ltd.
-
Ku Scott
Taiwan Semiconductor Manufacturing Co. Ltd.
-
Chern Chyi
Taiwan Semiconductor Manufacturing Co. Ltd.
-
Ueda Takeshi
Wafermasters Inc.
-
Harima Hiroshi
Kyoto Inst. Of Technol. Fac. Of Eng. & Des. Dept. Of Electronics & Information Sci.
-
Lin John
Taiwan Semiconductor Manufacturing Co. Ltd.
-
Ishigaki Toshikazu
Wafermasters Inc.
関連論文
- Development of an Ultrasensitive Gas Sensor Based on Single-Walled Carbon Nanotubes
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- 急速熱処理した極浅イオン注入シリコンウエハの紫外ラマン分光による非破壊結晶性評価(シリコン関連材料の作製と評価)
- Three Dimensional Stress Mapping of Silicon Surrounded by Copper Filled through Silicon Vias Using Polychromator-Based Multi-Wavelength Micro Raman Spectroscopy
- Thermal Behavior of Large-Diameter Silicon Wafers during High-Temperature Rapid Thermal Processing in Single Wafer Furnace
- Design of Single-Wafer Furnace and Its Rapid Thermal Processing Applications
- Single Wafer Furnace and Its Thermal Processing Applications
- Slip-Free Rapid Thermal Processing in Single Wafer Furnace
- Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN
- Titanium Silicide Formation and Anneal Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
- Highly Reliable, Backside Emissivity Independent Cobalt Silicide Process Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
- Pulsed Focused-Laser Beam Annealing of Ultra-Shallow Implanted Silicon and In Situ Dopant Activation Monitoring
- Noncontact In-Line Monitoring of Ge Content and Thickness Variations of Epitaxial Si_Ge_x Layers on Si(100) Using Polychromator-Based Multiwavelength Micro-Raman Spectroscopy
- Design of Multi-Wavelength Micro Raman Spectroscopy System and Its Semiconductor Stress Depth Profiling Applications
- Impact of Annealing Methods and Sequences on Dopant Activation and Diffusion of Ultra-shallow Implanted Silicon
- Solid-State Phase Transformation in Cubic Silicon Carbide
- ホトルミネセンス法およびDLTS法によるシリコン極浅接合の再結晶化過程の評価(シリコン関連材料の作製と評価)
- Redistribution of Boron and Fluorine Atoms in BF2 Implanted Silicon Wafers during Rapid Thermal Annealing
- Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN