Highly Reliable, Backside Emissivity Independent Cobalt Silicide Process Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
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概要
- 論文の詳細を見る
Very thin cobalt silicide formation and annealing processes were investigated as a function of process temperature (350-700℃) and Co film thickness using a susceptor-based low pressure rapid thermal processing (RTP) system. TiN capped thin Co films were investigated. Highly reliable, backside emissivity independent, low resistance, production worthy shallow silicide contact formation process has been demonstrated. Both a wide process window and an excellent sheet resistance uniformity have been demonstrated in cobalt silicide process integration steps. The net added non-uniformity of typical TiN capped 10 nm thick cobalt films was less than 0.5%.
- 社団法人応用物理学会の論文
- 1998-10-15
著者
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Yoo W
Wafermasters Inc. Ca Usa
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Yoo Woo
Wafer Masters Inc.
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Yoo Woo
Mattson Technology Inc.
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Yoo Woo
Department Of Electrical Engineering Kyoto University
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Whitworth David
Mattson Technology Inc.
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ATANOS Ashur
Mattson Technology, Inc.
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Atanos A
Mattson Technology Inc.
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Atanos Ashur
Mattson Technology Inc.
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Yoo Woo
Wafer Masters, Inc.
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