Susceptor-Based Rapid Thermal Processing System and Its Silicide Application

スポンサーリンク

概要

• 論文の詳細を見る

• The design concept and hardware configuration of a constant heat source, susceptor-based dual wafer rapid thermal processing (RTP) system are described. The temperature measurement/control techniques and thermal characteristics of the RTP system are described. Typical process results in CoSi and TiSi formation using the RTP system are reported. Change in sheet resistance uniformity before and after RTP steps and wafer-to-wafer temperature repeatability were kept below 0.5% and 1℃, respectively, in both processes. Due to the dual wafer process capability and steady state temperature control, a very high throughput at a minimal power consumption was realized. Many thermal processes used in furnaces can easily be converted to RTP processes without decreasing cost performance and/or deteriorating process results by using the RTP system.

• 社団法人応用物理学会の論文
• 1998-10-01

著者

• Yoo Woo

  Mattson Technology Inc.

• ATANOS Ashur

  Mattson Technology, Inc.

• Atanos Ashur

  Mattson Technology Inc.

• DAVIET Jean-Francois

  Mattson Technology, Inc.

• Daviet Jean-francois

  Mattson Technology Inc.

関連論文

• Titanium Silicide Formation and Anneal Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
• Highly Reliable, Backside Emissivity Independent Cobalt Silicide Process Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
• Susceptor-Based Rapid Thermal Processing System and Its Silicide Application

スポンサーリンク