Redistribution of Boron and Fluorine Atoms in BF2 Implanted Silicon Wafers during Rapid Thermal Annealing
スポンサーリンク
概要
- 論文の詳細を見る
Rapid thermal annealing (RTA) of 49BF2+ (70 keV, $1\times 10^{15}$ cm-2) implanted Si wafers (200 mm in diameter) was carried out using a single wafer furnace-type system and a lamp-based system. Sheet resistance and the uniformity of implanted wafers were measured after annealing under various annealing conditions. Boron and fluorine depth profiles were investigated using secondary ion mass spectroscopy (SIMS) after annealing. Boron atoms diffuse into bulk crystal as annealing progresses, while fluorine atoms move towards the surface and form two peculiar peaks around 65 nm and 105 nm from the surface, regardless of annealing conditions. A significant increase in sheet resistance due to boron clustering near the F peaks was observed in wafers annealed at 1100°C using a lamp-based system. The effects of annealing method, temperature and time on dopant redistribution were discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
-
Fukada Takashi
Wafer Masters Inc.
-
Yoo Woo
Wafer Masters Inc.
-
Aizawa Kazuo
NEC Hiroshima Limited, 7-10 Yoshikawa Kogyodanchi, Higashi Hiroshima, Hiroshima 739-0198, Japan
-
Setokubo Tsuyoshi
NEC Hiroshima Limited, 7-10 Yoshikawa Kogyodanchi, Higashi Hiroshima, Hiroshima 739-0198, Japan
-
Ohsawa Toshinori
Tokyo Electron Ltd., 3-6 Akasaka 5-chome, Minato-ku, Tokyo 107-8481, Japan
-
Yoo Woo
WaferMasters, Inc., 246 East Gish Road, San Jose, CA 95112, U.S.A.
-
Fukada Takashi
WaferMasters, Inc., 246 East Gish Road, San Jose, CA 95112, U.S.A.
関連論文
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- 急速熱処理した極浅イオン注入シリコンウエハの紫外ラマン分光による非破壊結晶性評価(シリコン関連材料の作製と評価)
- Genomic Structure and 5'-Flanking Sequences of Rat N-Acetylglucosaminyltransferase I Gene and Regulatory Role of Its Transcriptional Diversity(Biochemistry & Molecular Biology)
- Characterization of Rat N-Acetylglucosaminyltransferase I Expressed in Esherichia coli
- Cloning of a cDNA Encoding N-Acetylglucosaminyltransferase I from Rat Liver and Analysis of Its Expression in Rat Tissues
- Three Dimensional Stress Mapping of Silicon Surrounded by Copper Filled through Silicon Vias Using Polychromator-Based Multi-Wavelength Micro Raman Spectroscopy
- Thermal Behavior of Large-Diameter Silicon Wafers during High-Temperature Rapid Thermal Processing in Single Wafer Furnace
- Design of Single-Wafer Furnace and Its Rapid Thermal Processing Applications
- Single Wafer Furnace and Its Thermal Processing Applications
- Slip-Free Rapid Thermal Processing in Single Wafer Furnace
- Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation
- Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy
- Titanium Silicide Formation and Anneal Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
- Highly Reliable, Backside Emissivity Independent Cobalt Silicide Process Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
- Pulsed Focused-Laser Beam Annealing of Ultra-Shallow Implanted Silicon and In Situ Dopant Activation Monitoring
- Noncontact In-Line Monitoring of Ge Content and Thickness Variations of Epitaxial Si_Ge_x Layers on Si(100) Using Polychromator-Based Multiwavelength Micro-Raman Spectroscopy
- Design of Multi-Wavelength Micro Raman Spectroscopy System and Its Semiconductor Stress Depth Profiling Applications
- A Multi-Fluorescent MDA435 Cell Line for Mitosis Inhibitor Studies : Simultaneous Visualization of Chromatin, Microtubules, and Nuclear Envelope in Living Cells
- Dynamic Behavior of FCHO1 Revealed by Live-Cell Imaging Microscopy : Its Possible Involvement in Clathrin-Coated Vesicle Formation
- Rhythmic Cycle of Clathrin-Coated Pit Formation at the trans-Golgi Network in Human MDA-MB-435 Cells
- Impact of Annealing Methods and Sequences on Dopant Activation and Diffusion of Ultra-shallow Implanted Silicon
- Solid-State Phase Transformation in Cubic Silicon Carbide
- ホトルミネセンス法およびDLTS法によるシリコン極浅接合の再結晶化過程の評価(シリコン関連材料の作製と評価)
- Redistribution of Boron and Fluorine Atoms in BF2 Implanted Silicon Wafers during Rapid Thermal Annealing