Composition Dependence of Inhomogeneous Hydrogen Bonding Structures in a-SiGe:H
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概要
- 論文の詳細を見る
Local hydrogen bonding configurations in hydrogenated amorphous silicon germanium (a-SiGe:H) alloys fabricated by rf plasma chemical vapor deposition were systematically investigated by means of IR absorption spectroscopy with relating to the compositions. The H bonding configurations around Si in a-SiGe:H are quantitatively equivalent to those in a-Si:H. It was suggested that the deteriorating alloying property is partly due to the increase in the Si-H_2 content with increasing H content bonding to Si per Si atom (C_<H(Si)>). The C_<H(Si)> has positive correlations to both the H content (C_H) and Ge content (C_<Ge>), while the H content bonding to Ge per Ge atom (C_<H(Ge)>) is almost constant at 2-4 at.%. As a result, the preference of H attachment to Si over Ge has positive correlations to both C_H and C_<Ge>. The origin of the composition dependence of the preferential attachment is attributable to the H-elimination kinetics during film growth.
- 社団法人応用物理学会の論文
- 1999-11-15
著者
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Terakawa Akira
Department Of Electronic Science And Engineering Kyoto University:(present Address)new Materials Res
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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