Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si_2H_6
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-09-01
著者
-
MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
-
Yoshinobu Tatsuo
Department Of Electrical Engineering Kyoto University:(present Address) The Institute Of Scientific
-
FUYUKI Takashi
Department of Electrical Engineering, Kyoto University
-
Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
-
Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
関連論文
- Current-Induced Step Bunching on Vicinal Si(111)Studied by Light Scattering
- Controllable Nanopit Formation on Si(001) with a Scanning Tunneling Microscope
- Experimental Measurement of the Intensity Profiles of a Low-energy Electron Beam Extracted from a Scanning Tunneling Microscope Tip by Field Emission
- Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Application of Chemical Imaging Sensor to Electro Generated pH Distribution
- Visualization of pH Change of E. coli with a Novel pH Imaging Microscope
- Observation of Microorganisms Colonies Using a Scanning-Laser-Beam pH-Sensing Microscope
- Improvememt of Spatial Resolution of a Laser-Scanning pH-Imaging Sensor
- Simulation of Light Scattering by a Particle on a Film-Coated Substrate Using Coupled-Dipole Method
- Light Scattering by Submicron Particles on Film-Coated Wafers
- Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
- Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si_2H_6
- Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
- Enhanced Nano-Oxidation on a SCi-Treated Si Surface Using Atomic Force Microscopy
- Nanotribology of Clean and Oxide-Covered Silicon Surfaces Using Atomic Force Microscopy
- Fabrication of Nanopit Arrays on Si (111)
- Scanning Tunneling Microscopy Study of the Misfit Layer Compounds (LaSe)_xNbSe_2 and (PbSe)_xNbSe_2
- Low Energy Electron Stimulated Etching of Thin Si-Oxide Layer in Nanometer Scale Using Scanning Tunneling Microscope
- Low Energy Electron Stimulated Etching of Thin Si Oxide Layer Using STM : Nano-fabrication with A Localized Low-energy e-Beam
- Scanning Tunneling Microscopy Study of Faceting on Vicinal Si(113)
- STM Nano-Lithography with SiO_2 Mask
- Low Energy Electron Beam Stimulated Surface Reaction: Selective Etching of SiO_2/Si Using Scanning Tunneling Microscope
- Fluctuations of a Single Step and surface Height on Vicinal Surfaces
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
- Nanoscale Patterning of Au Films on Si Surfaces by Atomic Force Microscopy
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
- Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
- Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
- Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
- Strain in GaP Films Heteroepitaxially Grown on Si by Metalorganic Chemical Vapor Deposition
- Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
- Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
- Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
- Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
- Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
- Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Robust 4H-SiC pn Diodes Fabricated using (1120) Face
- High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
- Recent Progress in Epitaxial Growth of SiC for Power Devices
- Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
- Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer
- GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
- High-Quaity AIN by Initia ayer-by-ayer Growth on Surface-Controed 4H-SIC(0001)Substrate
- Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
- Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
- Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3)
- Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
- A Reproducible LPE Growth of High-Quality In_Ga_xP_As_y Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Transmission Electron Microscopic Study of the Surface and Interface of Carbonized-Layer/Si(100)
- Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- SiO_2 Film Deposition by KrF Excimer Laser Irradiation
- Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
- Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I)
- Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition
- Plasma Etching of CVD Grown Cubic SiC Single Crystals
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Photo-Ionization of Aluminum Atoms by Vacuum Ultra Violet Light
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- Analysis of Electron Beam Induced Current Considering Sample Dimensions : Measurement of Diffusion Length and Surface Recombination Velocity
- Plasma Anodic Oxidation of InP
- Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure
- Micropatterning of Si Surface with Protein Molecules by the AFM Anodic Oxidation Method