Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
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概要
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To obtain a high-crystalline-quality AlN/GaN short-period superlattice with higher average GaN mole fraction, the effects of the thicknesses of AlN barrier and GaN well layers on the superlattice growth were investigated. Coherent growth with an average GaN mole fraction of 20% was realized by reducing the AlN barrier layer thickness to 8 bilayers (BL) while keeping the GaN well layer thickness at 2 BL. Further reduction in the AlN barrier layer thickness resulted in lattice relaxation and degradation of the crystalline quality. Grown layers with various well and barrier thicknesses were investigated by transmission electron microscopy, X-ray diffraction, and atomic force microscopy.
- 2013-08-25
著者
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Kikuchi Ryosuke
Department Of Cardiology Nagoya University Graduate School Of Medicine
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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Kaneko Mitsuaki
Department Of Electronic Science And Engineering Kyoto University
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Suda Jun
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kimoto Tsunenobu
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kaneko Mitsuaki
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kikuchi Ryosuke
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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