Kaneko Mitsuaki | Department Of Electronic Science And Engineering Kyoto University
スポンサーリンク
概要
関連著者
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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Kaneko Mitsuaki
Department Of Electronic Science And Engineering Kyoto University
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Kikuchi Ryosuke
Department Of Cardiology Nagoya University Graduate School Of Medicine
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Ishii Ryota
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyoto University
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OKUMURA Hironori
Department of Electronic Science and Engineering, Kyoto University
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KANEKO Mitsuaki
Department of Electronic Science and Engineering, Kyoto University
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University
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Suda Jun
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Suda Jun
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Funato Mitsuru
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kimoto Tsunenobu
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kaneko Mitsuaki
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kaneko Mitsuaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kikuchi Ryosuke
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
著作論文
- AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
- Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)