Okumura Hironori | Department Of Electronic Science And Engineering Kyoto University
スポンサーリンク
概要
関連著者
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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Kaneko Mitsuaki
Department Of Electronic Science And Engineering Kyoto University
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Kikuchi Ryosuke
Department Of Cardiology Nagoya University Graduate School Of Medicine
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Ishii Ryota
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kimoto Tsunenobu
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyoto University
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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Ishii Yasuhiro
Department Of Applied Protein Chemistry Faculty Of Agriculture Tokyo University Of Agriculture And T
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OKUMURA Hironori
Department of Electronic Science and Engineering, Kyoto University
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KANEKO Mitsuaki
Department of Electronic Science and Engineering, Kyoto University
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University
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SUDA Jun
Department of Electronics Science and Engineering, Kyoto University
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Suda Jun
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Suda Jun
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Koukitu Akinori
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Koukitu Akinori
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Funato Mitsuru
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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KIMOTO Tsunenobu
Department of Electronics Science and Engineering, Kyoto University
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Akiyama Kazuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Akiyama Kazuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Murakami Hisashi
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Murakami Hisashi
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Abe Sohei
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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KUMAGAI Yoshinao
Institute of Material Science, University of Tsukuba
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Kumagai Yoshinao
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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OKUMURA Hironori
Department of Electronics Science and Engineering, Kyoto University
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Okumura Hironori
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kaneko Mitsuaki
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kaneko Mitsuaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kikuchi Ryosuke
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ishii Yasuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
著作論文
- Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
- In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
- AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
- Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
- Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)