KUMAGAI Yoshinao | Institute of Material Science, University of Tsukuba
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概要
関連著者
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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KUMAGAI Yoshinao
Institute of Material Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Kumagai Y
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Kumagai Y
Hitachi Ltd. Ibaraki Jpn
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Mori Ryosuke
Institute Of Materials Science University Of Tsukuba
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ISHIMOTO Kouichi
Institute of Materials Science, University of Tsukuba
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Mori R
Nagaoka Univ. Technol. Nagaoka Jpn
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Ishimoto Kouichi
Institute Of Materials Science University Of Tsukuba:(present Address) Ibm Japan Ltd.
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Fujii Kunihiro
Institute of Materials Science, University of Tsukuba
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FUJII Kunihiro
Institute of Material Science, University of Tsukuba
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Hashimoto S
Texas Instruments Tsukuba R & D Center Ltd. Ibaraki Jpn
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PARK Kang-Ho
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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HASHIMOTO Satoshi
Texas Instruments Tsukuba Research and Development Center, Limited
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Park Kang-ho
Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.
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Park Kang-ho
Telecommunication Basic Research Laboratory
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Park Kang-ho
Basic Research Laboratory Electronics And Telecommunications Research Institute
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YAMAMOTO Masaki
Institute of Materials Science, University of Tsukuba
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PARK Kyung-ho
Texas Instruments Tsukuba Research & Development Center Ltd.
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Tanaka Masaya
Institute Of Materials Science University Of Tsukuba
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Hashimoto S
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Park K‐h
Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.
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KANAYA Hiroyuki
Institute of Material Science, University of Tsukuba
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YAMAKA Eiso
Tsukuba College of Technology
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Park Kyung-ho
Texas Instruments Inc.
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Kanaya H
Institute Of Materials Science University Of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Hashimoto Satoshi
Texas Instruments Tsukuba Research And Development Center Limited
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Yamamoto Masaki
Institute Of Materials Science University Of Tsukuba
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Koukitu Akinori
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Akiyama Kazuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Murakami Hisashi
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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Tanaka M
Toshiba Corp. Kawasaki Jpn
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TANAKA Masaya
Institute of Materials Science, University of Tsukuba
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TEE Keh-Ming
Institute of Materials Science, University of Tsukuba
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ISHIBASHI Takayuki
Institute of Materials Science, University of Tsukuba
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Ishibashi Takayuki
Institute Of Materials Science University Of Tsukuba
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Ishibashi Takayuki
Institute Of Materials Science University Of Tsukuba:(present Address) Faculty Of Technology Tokyo U
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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MATSUMOTO Hisashi
Institute of Materials Science, University of Tsukuba
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CHO Yukiko
Institute of Materials Science, University of Tsukuba
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Tee Keh-ming
Institute Of Materials Science University Of Tsukuba
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Cho Yukiko
Institute Of Materials Science University Of Tsukuba
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Takakura K
Institute Of Applied Physics University Of Tsukuba
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Ishii Yasuhiro
Department Of Applied Protein Chemistry Faculty Of Agriculture Tokyo University Of Agriculture And T
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Matsumoto Hisashi
Institute Of Materials Science University Of Tsukuba
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Kanaya H
Toshiba Corp. Yokohama Jpn
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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Koukitu Akinori
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Takakura Ken′ichiro
Institute of Applied Physics, University of Tsukuba
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Tanaka Masaya
Institute of Materials Science, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305, Japan
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Suemasu Takashi
Institute of Materials Science, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305, Japan
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Akiyama Kazuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Murakami Hisashi
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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MORI Ryosuke
Institute of Materials Science, University of Tsukuba
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CHO Yukiko
Institute of Material Science, University of Tsukuba
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Abe Sohei
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kumagai Yoshinao
Institute of Materials Science, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305, Japan
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Kumagai Yoshinao
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Kumagai Yoshinao
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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HASEGAWA Fumio
Institute of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institute of Material Science, University of Tsukuba
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Ishii Yasuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
著作論文
- Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
- Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
- Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
- In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
- Formation of β-FeSi 2 Layers on Si(001) Substrates
- In situ Gravimetric Monitoring of Decomposition Rate on Surface of ($10\bar{1}2$) $R$-Plane Sapphire for High-Temperature Growth of Nonpolar AlN