Mori Ryosuke | Institute Of Materials Science University Of Tsukuba
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概要
関連著者
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Kumagai Y
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Mori Ryosuke
Institute Of Materials Science University Of Tsukuba
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Kumagai Y
Hitachi Ltd. Ibaraki Jpn
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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Mori R
Nagaoka Univ. Technol. Nagaoka Jpn
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KUMAGAI Yoshinao
Institute of Material Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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ISHIMOTO Kouichi
Institute of Materials Science, University of Tsukuba
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Ishimoto Kouichi
Institute Of Materials Science University Of Tsukuba:(present Address) Ibm Japan Ltd.
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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PARK Kang-Ho
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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Park Kang-ho
Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.
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Park Kang-ho
Telecommunication Basic Research Laboratory
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Park Kang-ho
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Tanaka M
Toshiba Corp. Kawasaki Jpn
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YAMAMOTO Masaki
Institute of Materials Science, University of Tsukuba
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TANAKA Masaya
Institute of Materials Science, University of Tsukuba
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TEE Keh-Ming
Institute of Materials Science, University of Tsukuba
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ISHIBASHI Takayuki
Institute of Materials Science, University of Tsukuba
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PARK Kyung-ho
Texas Instruments Tsukuba Research & Development Center Ltd.
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Tanaka Masaya
Institute Of Materials Science University Of Tsukuba
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Ishibashi Takayuki
Institute Of Materials Science University Of Tsukuba
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Ishibashi Takayuki
Institute Of Materials Science University Of Tsukuba:(present Address) Faculty Of Technology Tokyo U
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Park K‐h
Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.
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Tee Keh-ming
Institute Of Materials Science University Of Tsukuba
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Park Kyung-ho
Texas Instruments Inc.
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Yamamoto Masaki
Institute Of Materials Science University Of Tsukuba
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MORI Ryosuke
Institute of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institute of Materials Science, University of Tsukuba
著作論文
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction