Ishimoto Kouichi | Institute Of Materials Science University Of Tsukuba:(present Address) Ibm Japan Ltd.

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概要

• 同名の論文著者
• Institute Of Materials Science University Of Tsukuba:(present Address) Ibm Japan Ltd.の論文著者

関連著者

• Kumagai Y

  Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Kumagai Y

  Hitachi Ltd. Ibaraki Jpn

• Kumagai Yoshinao

  Institute Of Materials Science University Of Tsukuba

• ISHIMOTO Kouichi

  Institute of Materials Science, University of Tsukuba

• Ishimoto Kouichi

  Institute Of Materials Science University Of Tsukuba:(present Address) Ibm Japan Ltd.

• KUMAGAI Yoshinao

  Institute of Material Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

• Mori Ryosuke

  Institute Of Materials Science University Of Tsukuba

• Mori R

  Nagaoka Univ. Technol. Nagaoka Jpn

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• PARK Kang-Ho

  Basic Research Laboratory, Electronics and Telecommunications Research Institute

• Park Kang-ho

  Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.

• Park Kang-ho

  Telecommunication Basic Research Laboratory

• Park Kang-ho

  Basic Research Laboratory Electronics And Telecommunications Research Institute

• PARK Kyung-ho

  Texas Instruments Tsukuba Research & Development Center Ltd.

• Park K‐h

  Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.

• Park Kyung-ho

  Texas Instruments Inc.

• Kawabe Mitsuo

  Institute Of Materials Science University Of Tsukuba

• Kawabe Mitsuo

  Institute Of Applied Physics University Of Tsukuba

• Hashimoto S

  Texas Instruments Tsukuba R & D Center Ltd. Ibaraki Jpn

• HASHIMOTO Satoshi

  Texas Instruments Tsukuba Research and Development Center, Limited

• TEE Keh-Ming

  Institute of Materials Science, University of Tsukuba

• ISHIBASHI Takayuki

  Institute of Materials Science, University of Tsukuba

• Ishibashi Takayuki

  Institute Of Materials Science University Of Tsukuba

• Ishibashi Takayuki

  Institute Of Materials Science University Of Tsukuba:(present Address) Faculty Of Technology Tokyo U

• Hashimoto S

  Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn

• Tee Keh-ming

  Institute Of Materials Science University Of Tsukuba

• Hashimoto Satoshi

  Texas Instruments Tsukuba Research And Development Center Limited

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著作論文

• 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
• Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
• Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
• Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
• Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction

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