KANAYA Hiroyuki | Institute of Material Science, University of Tsukuba

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概要

• Kanaya Hiroyukiの詳細を見る
• 同名の論文著者
• Institute of Material Science, University of Tsukubaの論文著者

関連著者

• KANAYA Hiroyuki

  Institute of Material Science, University of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• YAMAKA Eiso

  Tsukuba College of Technology

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Kanaya H

  Institute Of Materials Science University Of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Kanaya H

  Toshiba Corp. Yokohama Jpn

• CHO Yukiko

  Institute of Materials Science, University of Tsukuba

• Cho Yukiko

  Institute Of Materials Science University Of Tsukuba

• CHO Yukiko

  Institute of Material Science, University of Tsukuba

• SHIGEKAWA Hidemi

  Institute of Applied Physics, University of Tsukuba

• Kumagai Y

  Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University

• Kumagai Y

  Hitachi Ltd. Ibaraki Jpn

• Kumagai Yoshinao

  Institute Of Materials Science University Of Tsukuba

• Shigekawa Hidemi

  Institute Of Applied Physics And 21st Coe University Of Tsukuba

• Fujii Kunihiro

  Institute of Materials Science, University of Tsukuba

• FUJII Kunihiro

  Institute of Material Science, University of Tsukuba

• KUMAGAI Yoshinao

  Institute of Material Science, University of Tsukuba

• Shigekawa Hidemi

  Institute Of Materials Science University Of Tsukuba

• Shigekawa Hidemi

  Institute Of Material Science University Of Tsukuba

• Kanaya Hiroyuki

  Institute Of Materials Science University Of Tsukuba

• Cho Y

  Yamaguchi Univ. Ube

• MORIYAMA Takashi

  National Space Development Agency of Japan

• NAKAJIMA Masakatsu

  National Space Development Agency of Japan

• HASEGAWA Fumio

  Institute of Material Science, University of Tsukuba

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著作論文

• Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
• Thermal Relaxation of Strained SiGe/Si Heterostructure
• Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
• Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers
• Preferential PtSi Formation in Thermal Reaction between Pt and Si_Ge_ MBE Layers
• Reduction of the Barrier Height of Silicide/p-Si_Ge_x Contact for Application in an Infrared Image Sensor

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