Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices

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概要

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• In this paper, we have investigated reliability of n- and p-type 4H-SiC(0001) metal--oxide--semiconductor (MOS) devices with N₂O-grown oxides and deposited oxides annealed in N₂O. From the results of time-dependent dielectric breakdown (TDDB) tests, it is revealed that the N₂O-grown oxides have relatively-high reliability (4--30 C cm-2 for n- and p-MOS structures). In addition, the deposited SiO₂ on n- and p-SiC exhibited a high charge-to-breakdown of 70.0 and 54.9 C cm-2, respectively. The n/p-MOS structures with the deposited SiO₂ maintained a high charge-to-breakdown of 19.9/15.1 C cm-2 even at 200 °C. The deposited SiO₂ annealed in N₂O has promise as the gate insulator for n- and p-channel 4H-SiC(0001) MOS devices because of its high charge-to-breakdown and good interface properties.

• 2011-09-25

著者

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Noborio Masato

  Department Of Electronic Science And Engineering Kyoto University

• Grieb Michael

  Fraunhofer IISB, 91058 Erlangen, Germany

• Bauer Anton

  Fraunhofer IISB, 91058 Erlangen, Germany

• Peters Dethard

  SiCED Electronics Development GmbH & Co. KG, 91058 Erlangen, Germany

• Friedrichs Peter

  SiCED Electronics Development GmbH & Co. KG, 91058 Erlangen, Germany

• Kimoto Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• Peters Dethard

  SiCED Electronics Development GmbH & Co. KG, 91058 Erlangen, Germany

• Friedrichs Peter

  SiCED Electronics Development GmbH & Co. KG, 91058 Erlangen, Germany

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