High Pressure Oxidation of 4H-SiC in Nitric Acid Vapor

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概要

• 論文の詳細を見る

• High pressure chemical vapor oxidation of SiC in nitric acid vapor is reported. Higher growth rate at temperatures as low as 400 to 500 °C has been achieved. The oxidation kinetics has been studied. It has been observed that the growth rate is strongly dependent on temperature, and the thickness of the oxide increases almost linearly with time within the error limits. X-ray photoelectron spectroscopy (XPS) measurement has been carried out to study the composition of the oxide. Room temperature electrical characterization (current--voltage and capacitance--voltage) has been carried out to estimate the oxide breakdown field strength, oxide charges, and interface state density. It is observed that prolonged oxidation or oxidation at higher temperature in acid ambient deteriorates the quality of oxide.

• 2011-10-25

著者

• Bauer Anton

  Fraunhofer IISB, 91058 Erlangen, Germany

• DasGupta Nandita

  Department of Electrical Engineering, IIT Madras, Chennai 600036, Tamil Nadu, India

• Selvi K.

  Department of Electrical Engineering, IIT Madras, Chennai 600036, Tamil Nadu, India

• Sreenidhi Turuvekere

  Department of Electrical Engineering, IIT Madras, Chennai 600036, Tamil Nadu, India

• Ryssel Heiner

  Universitaet Erlangen, Lehrstuhl fuer Elektronische Bauelemente, Cauerstrasse 6, 91058 Erlangen, Germany

• Bauer Anton

  Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany

関連論文

• Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
• High Pressure Oxidation of 4H-SiC in Nitric Acid Vapor

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