Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing

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概要

• 論文の詳細を見る

• The effects of postimplantation annealing on the homogeneous depth profiles of epitaxially doped B and Al in 4H–SiC were investigated after the ion implantation of various species. We found a marked decrease in the atomic B concentration close to the surface in epitaxially B-doped layers after the implantation of Al, N, or P ions followed by annealing at 1700 °C. On the other hand, the Al profiles in epitaxially Al-doped layers were preserved after the same processes.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-08-15

著者

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Pensl Gerhard

  Institute Of Applied Physics University Of Erlangen-nurnberg

• Negoro Yuki

  Department Of Electronic Science And Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• Pensl Gerhard

  Institute of Applied Physics, Friedrich-Alexander-University of Erlangen-Nünberg, Staudtstr. 7, Erlangen 91058, Germany

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