Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism

概要

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The temperature- and frequency-dependent electrical properties of SiO2/3C–SiC/6H–SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C–SiC film is doped with an average concentration of $8.4\times 10^{16}$ cm-3. One nitrogen donor level and a shallow donor level were found. The measured interface state density near the conduction band edge of 3C–SiC is below $10^{11}$ cm-2 eV-1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO2/n-type SiC consist of two different kinds of interface traps.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-09-15