Pensl Gerhard | Institute Of Applied Physics University Of Erlangen-nurnberg

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概要

• 同名の論文著者
• Institute Of Applied Physics University Of Erlangen-nurnbergの論文著者

関連著者

• Pensl Gerhard

  Institute Of Applied Physics University Of Erlangen-nurnberg

• PENSL Gerhard

  Institute of Applied Physics, University of Erlangen-Nurnberg

• ITOH Hisayoshi

  Japan Atomic Energy Research Institute

• Itoh Hisayoshi

  Japan Atomic Energy Agency

• OHSHIMA Takeshi

  Japan Atomic Energy Research Institute

• LEE Kin

  Japan Atomic Energy Agency

• OHI Akihiko

  Japan Atomic Energy Agency

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Lee Kin

  Institute Of Applied Physics University Of Erlangen-nurnberg

• Soueidan Maher

  Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon 1, 43 Bd du 11 nov. 1918, 6962

• Ferro Gabriel

  Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon 1, 43 Bd du 11 nov. 1918, 6962

• Monteil Yves

  Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon 1, 43 Bd du 11 nov. 1918, 6962

• Negoro Yuki

  Department Of Electronic Science And Engineering Kyoto University

• Monteil Yves

  Laboratoire Des Multimateriaux Et Interfaces Umr-cnrs 5615 Ucb-lyon 1

• Ferro Gabriel

  Laboratoire Des Multimateriaux Et Interfaces Umr-cnrs 5615 Ucb-lyon 1

• Soueidan Maher

  Laboratoire Des Multimateriaux Et Interfaces Umr-cnrs 5615 Ucb-lyon 1

• Ohshima Takeshi

  Japan Atomic Energy Agency

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• Pensl Gerhard

  Institute of Applied Physics, Friedrich-Alexander-University of Erlangen-Nünberg, Staudtstr. 7, Erlangen 91058, Germany

• Oshima Takeshi

  Japan Atomic Energy Agency

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著作論文

• Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching
• Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism
• Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing

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