Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation

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概要

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• Carrier lifetimes in a highly Al-doped p-type epilayer (N_{\text{A}} = 1\times 10^{18} cm^-3) are investigated by differential microwave photoconductance decay (μ-PCD) measurements. A carrier lifetime of 310 ns in the as-grown p-type epilayer decreases to 90 ns by thermal treatment in Ar, O<inf>2</inf>, or N<inf>2</inf>atmospheres ({>}700 °C), and recovers to 300 ns by H<inf>2</inf>annealing ({>}750 °C). Hydrogen is detected at a concentration of (2{\mbox{--}}3)\times 10^{15} cm^-3in the H<inf>2</inf>-annealed epilayer. These results suggest that a lifetime killer exists in the p-type epilayer, limiting the carrier lifetime to 90 ns and is passivated by hydrogen annealing, resulting in the improved carrier lifetime of 300 ns.

• 2013-12-25

著者

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Okuda Takafumi

  Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

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