Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask
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概要
- 論文の詳細を見る
Selective embedded growth of 4H–SiC trenches in SiC(0001) substrates utilizing a carbon mask by chemical vapor deposition has been investigated. The SiC trenches have been successfully embedded, and the carbon mask is successfully removed by thermal oxidation. The growth rate inside the SiC trench region on the masked SiC substrates is three times higher than that on nonmasked planar SiC substrates. Micro-Raman scattering measurements reveal that the embedded region is homoepitaxial 4H–SiC.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-07-15
著者
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Malhan Rajesh
Research Laboratories Denso Corp.
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Takeuchi Yuichi
Research Laboratories Denso Corp.
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Chen Yi
Department Of Chemistry And Biochemistry Graduate School Of Engineering Kyushu University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan
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Malhan Rajesh
Research Laboratories, DENSO CORP., 500-1 Minamiyama, Komenoki-cho, Nisshin, Aichi 470-0111, Japan
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Chen Yi
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan
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Takeuchi Yuichi
Research Laboratories, DENSO CORP., 500-1 Minamiyama, Komenoki-cho, Nisshin, Aichi 470-0111, Japan
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