High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N_2O Annealing

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• KAWANO Hiroaki

  Dept. of Cardio.,Juntendo Univ.,int. Medi.

• Kawano Hiroaki

  Dept. Of Electronic Sci. & Eng. Kyoto University

• KIMOTO Tsunenobu

  Dept. of Electronic Sci. & Eng., Kyoto University

• NOBORIO Masato

  Dept. of Electronic Sci. & Eng., Kyoto University

• SUDA Jun

  Dept. of Electronic Sci. & Eng., Kyoto University

• NOBORIO Masato

  Department of Electronic Science and Engineering, Kyoto University

• Kawano Hiroaki

  Dept. Of Cardio. Juntendo Univ. Int. Medi.

• Noborio Masato

  Department Of Electronic Science And Engineering Kyoto University

関連論文

• APOPTOSIS IN ACUTE AND CHRONIC MYOCARDITIS
• PROGNOSIS OF "CHRONIC MYOCARDITIS" DIAGNOSED BY BIOPSY : COMPARISON WITH DCM
• High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N_2O Annealing
• Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
• Morphological Study of Vagal Innervation in Human Semilunar Valves Using a Histochemical Method
• Causal Association between Major Histocompatibility Complex and Myocardial Infarction in NZW×BXSB F1 Mice
• THE AGE-RELATED MORPHOLOGIC CHANGES OF CONGENITALLY MALFORMED HEARTS WITH RIGHT VENTRICULAR PRESSURE OVERLOAD
• MORPHOLOGICAL STUDY ON VAGAL INNERVATION IN HUMAN ATRIOVENTRICULAR VALVES USING HISTOCHEMICAL METHOD
• Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
• Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
• Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
• Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
• Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and ($11\bar{2}0$) Formed by N2O Oxidation

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