Fabrication of Volcano-Structured Double-Gate Field Emitter Array by Etch-Back Technique

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概要

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• Volcano-structured double-gate field emitter arrays (VDG-FEAs) were fabricated using the etch-back technique. The fabrication process of the VDG-FEA is simple, and the height ($h_{\text{f}}$) of the focusing electrode relative to the extraction gate electrode is easily adjusted by varying the etch-back time without high-resolution lithography. We have fabricated two types of VDG-FEAs with $h_{\text{f}} = +220$ and 0 nm. The focusing characteristic is controlled by tuning $h_{\text{f}}$. The decrease of the anode current is reduced for the VDG-FEA with lower $h_{\text{f}}$ under focusing condition producing the same beam spot size.

• 2008-06-25

著者

• Aoki Toru

  Research Institute Of Electronics Shizuoka University

• SODA Takashi

  Research Institute of Electronics, Shizuoka University

• YASUMURO Chiaki

  National Institute of Advanced Industrial Science and Technology

• SAKAI Toshikatsu

  NHK Science and Technical Research Laboratories

• SAITO Nobuo

  NHK Science and Technical Research Laboratories

• Mimura Hidenori

  Research Institute Of Electrical Commnication Tohoku University

• Neo Yoichiro

  Reseach Institute Of Electrical Communication Tohoku University

• Nagao Masayoshi

  National Institute of Advanced Industrial Science & Technology (AIST)

• Nagao Masayoshi

  National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Kanemaru Seigo

  National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Kanemaru Seigo

  National Institute of Advanced Industrial Science & Technology (AIST)

• Mimura Hidenori

  Reseach Institute of Electrical Communication, Tohoku University,

• Aoki Toru

  Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan

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