Optical Properties of Wurtzite Zn1-xCdxO Films Grown by Remote-Plasma-Enhanced Metalorganic Chemical Vapor Deposition
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概要
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Zn1-xCdxO films were grown on $a$-plane ($11\bar{2}0$) sapphires by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The growth temperature, the group-II flow ratio $R$, and RF power are important parameters for the growth of Zn1-xCdxO films by RPE-MOCVD. $R$ is defined as the molar function of $[\text{DMCd}/(\text{DEZn}+\text{DMCd})]$. We discuss typical growth features associated with RPE-MOCVD and the refractive indices of wurtzite-type films. The band gap energy of Zn1-xCdxO grown at 350 °C can be controlled from 3.3 down to 1.8 eV. The refractive index is measured by ellipsometry at 1.96 eV and is found to vary from 2.07 to 2.78.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Aoki Toru
Research Institute Of Electronics Shizuoka University
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NAKAMURA Atsushi
Research Institute for Information Science and Education, Hiroshima University
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Ohashi Toshiya
Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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Yamamoto Kenji
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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Temmyo Jiro
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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Ohashi Toshiya
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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Aoki Toru
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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