Nonpolar $(11\bar{2}0)$ p-Type Nitrogen-Doped ZnO by Remote-Plasma-Enhanced Metalorganic Chemical Vapor Deposition

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概要

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• Nonpolar crystal orientation showed a positive effect on the chemical bonding states of nitrogen-doped ZnO (ZnO:N) for attaining p-type conductivity. Remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD) was used to grow nonpolar- and polar-orientated films on $R$-plane and $a$-plane sapphires, respectively. Non-polar orientation permitted nitrogen doping as the acceptor mode with lesser donor complexes giving p-type conductivity in both as-grown and annealed conditions. Carbon complexes (C with O) were observed in both orientations with lower binding energy in the nonpolar orientation showing weak complexes in the nonpolar mode. The difference in the mechanism of nitrogen incorporation depending on nonpolar- and polar-oriented growths was explained.

• 2007-06-25

著者

• NAKAMURA Atsushi

  Research Institute for Information Science and Education, Hiroshima University

• TEMMYO Jiro

  Graduate School of Electronic Science and Technology, Shizuoka University

• Gangil Sandip

  Graduate School Of Electronic Science And Techonology Shizuoka University

• Shimomura Masaru

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Gangil Sandip

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

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