Dot-Height Dependence of Photoluminescence from ZnO Quantum Dots
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概要
- 論文の詳細を見る
We report on the optical properties of ZnO nanodots and how they are influenced by the height of the dot configuration. The nanodots were grown on SiO2/Si substrates by remote-plasma enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The dot configuration was regulated by controlling the growth time. The photoluminescence (PL) spectra of nanodots having average dot height of 2.5, 3.5, and 4.5 nm grown on SiO2/Si substrates were measured at 16 K. A blue shift in the excitonic emission was observed for shorter dots due to a larger quantum confinement effect. The fractional-dimensional space model was used to estimate a dimensionality of 2.35 for ZnO nano dots with an average dot height of 2.5 nm.
- 2008-04-25
著者
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NAKAMURA Atsushi
Research Institute for Information Science and Education, Hiroshima University
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Temmyo Jiro
Research Institute of Electronics, Shizuoka University・Graduate School of Electronic Science and Tec
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Gotoh Hideki
Ntt Basic Research Laboratories
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Matsui Yoshio
Advance Materials Laboratory National Institute For Materials Science
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Tawara Takehiko
Ntt Basic Res. Lab. Kanagawa Jpn
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Okamatsu Kota
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 305-8501, Japan
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Tawara Takehiko
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Temmyo Jiro
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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Temmyo Jiro
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 305-8501, Japan
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Matsui Yoshio
Advanced Materials Laboratory, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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