Characterization of Wurtzite Zn1-xCdxO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition

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概要

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• The optical properties of wurtzite Zn1-xCdxO films were investigated. The films were grown on ($11\bar{2}0$) $a$-plane sapphire substrates by remote plasma enhanced metalorganic chemical vapor deposition (RPE-MOCVD) and a characterized by X-ray diffraction, photoluminescence (PL), ultraviolet/visible/near-infrared (UV/VIS/NIR) optical transmission spectroscopy and Hall measurement. The content ratio of the films was controlled by changing the molar ratio of diethyl zinc (DEZn) to dimethyl cadmium (DMCd). The optical band gap of the films at nearly 3.28 eV was shifted by alloying with Cd down to 1.85 eV depending on the alloy composition. The evolution of the PL lineshape was studied as a function of temperature. The activation energy of the films calculated from the variation of the PL peak intensity was as large as the binding energy of ZnO. In addition, the films showed a large Stokes shift at room temperature, which is discussed in terms of the localization of excitons in a ternary alloy.

• Japan Society of Applied Physicsの論文
• 2004-11-01

著者

• NAKAMURA Atsushi

  Graduate School of Electronic Science and Technology, Shizuoka University

• TEMMYO Jiro

  Graduate School of Electronic Science and Technology, Shizuoka University

• Aoki Toru

  Graduate School Of Electronic Science And Technology Shizuoka University

• Gotoh Hideki

  Ntt Basic Research Laboratories

• Ishihara Junji

  Research Institute Of Electronics Shizuoka University

• Shigemori Satoshi

  Research Institute Of Electronics Shizuoka University

• Yamamoto Kenji

  Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan

• Temmyo Jiro

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Aoki Toru

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

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