Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse Vapor–Liquid–Solid Mechanism
スポンサーリンク
概要
- 論文の詳細を見る
Under a CBr4 gas supply, Au nanoparticles dig into GaAs and InP substrates to form nanoholes through the reverse vapor–liquid–solid mechanism. The nanohole formation tends to proceed in the [111]B direction. For GaAs, straight holes sometimes appear in the [011] and [211]B directions. This is due to the stable {111}B facets, which block the etching. For InP, many straight holes are seen in the [111]B direction. For both materials, direct etching of the surface also occurs. It is therefore necessary to find the optimum etching conditions for high selectivity to fabricate nanoholes.
- Japan Society of Applied Physicsの論文
- 2005-12-10
著者
-
Tateno Kouta
Ntt Basic Research Laboratories Ntt Corporation
-
Gotoh Hideki
Ntt Basic Research Laboratories
-
Nakano Hidetoshi
Ntt Basic Research Laboratories
関連論文
- Zn_Cd_xO/ZnO Heterostructures for Visible Light Emitting Devices
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- Dependence of surface harmonics generation properties on carrier-envelope phase of few-cycle laser field
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Efficient Carrier-Envelope Offset Locking with a Simplified Configuration of an $f$-to-$2f$ Interferometer
- Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots
- Effects of Dimensionality on Radiative Recombination Lifetime of Excitons in Thin Quantum Boxes of Intermediate Regime between Zero and Two Dimensions ( Quantum Dot Structures)
- Simultaneous Measurement of Absorption and X-Ray Emission from Preformed Plasma Generated by Ultrashort Prepulse
- Spatially Ordered Self-Assembled Quantum Dots with Uniform Shapes Fabricated by Patterning Nanoscale SiN Islands
- Exciton and biexciton emissions from single GaAs quantum dots in (Al,Ga)As nanowires
- Multi-quantum structures of GaAs/AlGaAs Free-standing Nanowires
- Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates
- Distinctive feature of ripening during growth interruption of InGaAs quantum dot epitaxy using Bi as a surfactant (Special issue: Microprocesses and nanotechnology)
- -Oriented In_Ga_As Nanowires Laterally Grown on GaAs (311)B Substrate in Au-Catalyzed Vapor-Liquid-Solid Mode
- Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate
- InP Nodes in GaP-based Free-standing Nanowires on Si(111)
- Anisotropy in Ultrafast Carrier and Phonon Dynamics in p-Type Heavily Doped Si
- Enhanced Water-Window X-Ray Pulse Generation from Femtosecond-Laser-Produced Plasma with a Carbon Nanotube Target
- Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant
- Enhancement of the Excitonic Effects in Semiconductor Thin Quantum Boxes with Large Lateral Size
- Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate
- InGaN quantum wells with small potential fluctuation
- Tunable Terahertz Electromagnetic Wave Generation Using Birefringent Crystal and Grating Pair
- Dot-Height Dependence of Photoluminescence from ZnO Quantum Dots
- Femtosecond Laser-Excited Two-Photon Fluorescence Microscopy of Surface Plasmon Polariton (Special Issue : Solid State Devices and Materials (2))
- Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
- Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source
- Vertically Aligned InP Nanowires Grown via the Self-Assisted Vapor-Liquid-Solid Mode
- Dependence of Electron $g$-Factor on Barrier Aluminum Content in GaAs/AlGaAs Quantum Wells
- Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
- Characterization of Individual GaAs/AlGaAs Self-Standing Nanowires by Cathodoluminescence Technique using Transmission Electron Microscope
- Highly Selective ZEP/AlGaAs Etching for Photonic Crystal Structures Using Cl2/HI/Xe Mixed Plasma
- Characterization of Wurtzite Zn1-xCdxO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Measurement of the True Value of the Carrier-Envelope Phase of a Few-Cycle Laser Pulse by the Interference between Second and Third Harmonics from the Surface of a Solid
- Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires
- Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse Vapor–Liquid–Solid Mechanism
- Multi-Quantum Structures of GaAs/AlGaAs Free-Standing Nanowires
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Direct Biexciton Creation with Two-Photon Excitation for Ideal Entangled Photon Pair Emissions in Optically Active Quantum Dots
- Growth of InP nanowires on graphene-covered Fe