Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate
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概要
- 論文の詳細を見る
We report the core-multishell GaP/GaAs/GaP nanowires grown in a metalorganic vapor phase epitaxy system by a combination of the vapor--liquid--solid growth mode and conventional vapor phase epitaxy method. By growing GaAs sacrificial segments on the core GaP nanowires followed by selective chemical etching, Au particles were removed and top faceted core-shell nanowires were formed after the shell growth. Analysis by transmission electron microscopy indicated that the shell layers were epitaxially grown on the sides of core GaP nanowires.
- Japan Society of Applied Physicsの論文
- 2008-06-25
著者
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Zhang Guoqiang
Ntt Basic Research Laboratories Ntt Corporation
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SOGAWA Tetsuomi
NTT Basic Research Laboratories, NTT Corporation
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Tateno Kouta
Ntt Basic Research Laboratories Ntt Corporation
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NAKANO Hidetoshi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corp.
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Sogawa Tetsuomi
Ntt Basic Research Laboratories
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Nakano Hidetoshi
Ntt Basic Research Laboratories
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