Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires
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概要
- 論文の詳細を見る
We report the optical properties of GaAs quantum dots embedded in (Al,Ga)As nanowires grown by the vapor–liquid–solid method. We used the micro-photoluminescence (PL) technique to observe PL peaks, which are assigned as exciton and biexciton emissions from single quantum dots. In addition, unusual features appear in the excitation power dependence of the energies and linewidths of the two PL peaks. The PL also depends on the optical polarization axis, indicating that the nanostructures have a highly asymmetrical shape. The results show that our method is a promising way of engineering the positions and optical properties of GaAs/(Al,Ga)As nanostructures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Tateno Kouta
Ntt Basic Research Laboratories Ntt Corporation
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Gotoh Hideki
Ntt Basic Research Laboratories
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Sanada Haruki
Ntt Basic Research Laboratories Ntt Corporation
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Nakano Hidetoshi
Ntt Basic Research Laboratories
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Nakano Hidetoshi
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Sanada Haruki
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Tateno Kouta
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Gotoh Hideki
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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