Anisotropy in Ultrafast Carrier and Phonon Dynamics in p-Type Heavily Doped Si
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概要
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We performed time-resolved reflectivity measurements in p-type heavily doped Si under non-resonant excitation. A large contribution from anisotropic state-filling is observed, indicating that the lowered Fermi energy due to the p-type heavy doping enhances the anisotropy in the hole distribution. The initial phase shift of coherent phonons induced by p-type doping is attributed to the anisotropic hole distribution.
- 2009-10-25
著者
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Ishizawa Atsushi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corp.
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Tateno Kouta
Ntt Basic Research Laboratories Ntt Corporation
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Oguri Katsuya
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corp.
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Gotoh Hideki
Ntt Basic Research Laboratories
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Nakano Hidetoshi
Ntt Basic Research Laboratories
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Tawara Takehiko
Ntt Basic Res. Lab. Kanagawa Jpn
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Nakano Hidetoshi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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Kitajima Masahiro
Department of Applied Physics, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Kitajima Masahiro
Department of Applied Physics, School of Applied Science, National Defense Academy of Japan, Yokosuka, Kanagawa, 239-8686, Japan
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Kato Keiko
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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Tawara Takehiko
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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Ishizawa Atsushi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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