Femtosecond Laser-Excited Two-Photon Fluorescence Microscopy of Surface Plasmon Polariton (Special Issue : Solid State Devices and Materials (2))

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概要

• 論文の詳細を見る

著者

• Oguri Katsuya

  Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corp.

• KUBO Atsushi

  Institute for Study of the Earths Interior, Okayama University

• Nakano Hidetoshi

  Ntt Basic Research Laboratories

• Hattori Tatsumi

  Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

• Miyazaki Hideki

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

関連論文

• Dependence of surface harmonics generation properties on carrier-envelope phase of few-cycle laser field
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• Efficient Carrier-Envelope Offset Locking with a Simplified Configuration of an $f$-to-$2f$ Interferometer
• Simultaneous Measurement of Absorption and X-Ray Emission from Preformed Plasma Generated by Ultrashort Prepulse
• Exciton and biexciton emissions from single GaAs quantum dots in (Al,Ga)As nanowires
• Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate
• InP Nodes in GaP-based Free-standing Nanowires on Si(111)
• Anisotropy in Ultrafast Carrier and Phonon Dynamics in p-Type Heavily Doped Si
• Enhanced Water-Window X-Ray Pulse Generation from Femtosecond-Laser-Produced Plasma with a Carbon Nanotube Target
• Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate
• InGaN quantum wells with small potential fluctuation
• Compressibility of Mg0.9Al0.2Si0.9O3 perovskite
• Femtosecond Laser-Excited Two-Photon Fluorescence Microscopy of Surface Plasmon Polariton (Special Issue : Solid State Devices and Materials (2))
• Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source
• Atomistic Model Calculation of Stress-Induced Domain Wall Instability in PbTiO3 Using Shell Model
• Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
• Highly Selective ZEP/AlGaAs Etching for Photonic Crystal Structures Using Cl2/HI/Xe Mixed Plasma
• Measurement of the True Value of the Carrier-Envelope Phase of a Few-Cycle Laser Pulse by the Interference between Second and Third Harmonics from the Surface of a Solid
• Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires
• Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse Vapor–Liquid–Solid Mechanism
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells

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