Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
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概要
- 論文の詳細を見る
The ability to intentionally bend nanowires at certain points would extend their applications further. Here, we present GaP-based nanowires with three GaAs bending nodes. The GaAs parts are selectively reduced by annealing. When 20-nm Au particles are used as catalysts, apparent bending is seen at the top GaAs node. At the bottom one, however, a thicker GaAs node is seen, which is due to excess growth at the GaAs side wall. How to control the bending at each node during the growth process remains an issue, but it should be possible to control it by applying an electric field.
- Japan Society of Applied Physicsの論文
- 2007-09-25
著者
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Zhang Guoqiang
Ntt Basic Research Laboratories Ntt Corporation
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Tateno Kouta
Ntt Basic Research Laboratories Ntt Corporation
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Sogawa Tetsuomi
Ntt Basic Research Laboratories
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Nakano Hidetoshi
Ntt Basic Research Laboratories
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Nakano Hidetoshi
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Sogawa Tetsuomi
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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