Highly Selective ZEP/AlGaAs Etching for Photonic Crystal Structures Using Cl2/HI/Xe Mixed Plasma

スポンサーリンク

概要

• 論文の詳細を見る

• We demonstrate the highly selective etching of AlGaAs photonic crystal (PhC) structures with electron beam (EB) resist masks by using Cl2/HI/Xe mixed plasma. We found that the Cl2/HI plasma etches the AlGaAs layer while suppressing EB mask etching, and the addition of Xe eliminates damage to the EB mask caused by radicals. With this balanced approach, we achieved a 3-fold increase in the etching selectivity of the etching rate ratio of AlGaAs/resist. Moreover, using these conditions we successfully fabricated an AlGaAs PhC slab with a fine structure and very small air holes that had a radius of 48 nm and a lattice constant of 240 nm.

• Japan Society of Applied Physicsの論文
• 2006-09-25

著者

• Notomi Masaya

  Ntt Basic Research Laboratories

• Kuramochi Eiichi

  Ntt Basic Research Laboratories Ntt Corporation

• Tateno Kouta

  Ntt Basic Research Laboratories Ntt Corporation

• Tanabe Takasumi

  Ntt Basic Research Laboratories Ntt Corporation

• Nakano Hidetoshi

  Ntt Basic Research Laboratories

• Tawara Takehiko

  Ntt Basic Res. Lab. Kanagawa Jpn

• Kuramochi Eiichi

  NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Ito Tetsu

  NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Tateno Kouta

  NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Tanabe Takasumi

  NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Notomi Masaya

  NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Tawara Takehiko

  NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

関連論文

• GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
• Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate ( Quantum Dot Structures)
• Photonic-Band-Gap Waveguides and Resonators in SOI Photonic Crystal Slabs(Photonic Crystals and Their Device Applications)
• Si-Based Photonic Crystals and Photonic-Bandgap Waveguides(Special Issue on Recent Progress of Integrated Photonic Devices)
• Frontiers Related with Automatic Shaping of Photonic Crystals(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• Dependence of surface harmonics generation properties on carrier-envelope phase of few-cycle laser field
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
• Self-Organization Phenomenon in a Strained InGaAs System and Its Application for Quantum Disk Lasers (Special Issue on Quantum Effect Divices and Their Fabrication Technologies)
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
• Efficient Carrier-Envelope Offset Locking with a Simplified Configuration of an $f$-to-$2f$ Interferometer
• Perfect Spatial Ordering of Self-Organized InGaAs/AlGaAs Quantum Disks on GaAs (311)B Substrate with Silicon-Nitride Dot Array
• Prefect Spatial Ordering of Self-Organized InGaAs/AlGaAs Box-Like Structure on GaAs (311)B Substrate with Buried Silicon-Nitride Dot Array
• Simultaneous Measurement of Absorption and X-Ray Emission from Preformed Plasma Generated by Ultrashort Prepulse
• Organic Photonic Crystal Band Edge Laser Fabricated by Direct Nanoprinting
• Exciton and biexciton emissions from single GaAs quantum dots in (Al,Ga)As nanowires
• Multi-quantum structures of GaAs/AlGaAs Free-standing Nanowires
• Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates
• Distinctive feature of ripening during growth interruption of InGaAs quantum dot epitaxy using Bi as a surfactant (Special issue: Microprocesses and nanotechnology)
• -Oriented In_Ga_As Nanowires Laterally Grown on GaAs (311)B Substrate in Au-Catalyzed Vapor-Liquid-Solid Mode
• Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate
• InP Nodes in GaP-based Free-standing Nanowires on Si(111)
• Anisotropy in Ultrafast Carrier and Phonon Dynamics in p-Type Heavily Doped Si
• All-Optical Switching and Control of Silicon Photonic Crystal Nanocavities
• Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors
• Enhanced Water-Window X-Ray Pulse Generation from Femtosecond-Laser-Produced Plasma with a Carbon Nanotube Target
• All-optical memory based on buried heterostructure photonic crystal lasers (レーザ・量子エレクトロニクス)
• Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant
• Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate
• InGaN quantum wells with small potential fluctuation
• Dot-Height Dependence of Photoluminescence from ZnO Quantum Dots
• Femtosecond Laser-Excited Two-Photon Fluorescence Microscopy of Surface Plasmon Polariton (Special Issue : Solid State Devices and Materials (2))
• Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source
• Vertically Aligned InP Nanowires Grown via the Self-Assisted Vapor-Liquid-Solid Mode
• Energy Transfers between Er3+ Ions Located at the Two Crystalographic Sites of Er2O3 Grown on Si(111)
• High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection
• Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
• Characterization of Individual GaAs/AlGaAs Self-Standing Nanowires by Cathodoluminescence Technique using Transmission Electron Microscope
• Highly Selective ZEP/AlGaAs Etching for Photonic Crystal Structures Using Cl2/HI/Xe Mixed Plasma
• Measurement of the True Value of the Carrier-Envelope Phase of a Few-Cycle Laser Pulse by the Interference between Second and Third Harmonics from the Surface of a Solid
• Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires
• Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse Vapor–Liquid–Solid Mechanism
• Multi-Quantum Structures of GaAs/AlGaAs Free-Standing Nanowires
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• Simple analysis of water-filled hollow-core silica photonic bandgap fiber
• Growth of InP nanowires on graphene-covered Fe

もっと見る 閉じる

スポンサーリンク