Dependence of Electron $g$-Factor on Barrier Aluminum Content in GaAs/AlGaAs Quantum Wells

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The effects of quantum confinement on electron $g$-factor tensor components, $g_{\bot}$ and $g_{\|}$, were investigated for a wide variety of GaAs/AlxGa1-xAs quantum well structures, including the weak confinement regime, to determine the mapping of the $g$-factor components as functions of the aluminum content of an AlxGa1-xAs barrier and GaAs well thickness. The $g$-factor components were determined from the periods of electron spin precession, which were assessed by polarization- and time-resolved photoluminescence measurements under a magnetic field. The measured transverse component $g_{\bot}$ was found to depend substantially on the barrier aluminum content, while the longitudinal component $g_{\|}$ was insensitive to the aluminum content. In addition to the experiments, the electron $g$-factor was analyzed theoretically on the basis of the three-band $\mathbf{k}{\cdot}\mathbf{p}$ perturbation theory by using Kiselev’s method. Comparison of the experimental and theoretical results demonstrates that the three-band $\mathbf{k}{\cdot}\mathbf{p}$ calculation is sufficient to reproduce the main features of the experimental results including the effects of the barrier aluminum content.
2009-06-25