Multi-sideband Generation in a Femtosecond Cr^<4+>:YAG Laser

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概要

• 論文の詳細を見る
• 1999-02-01

著者

• KAMADA Hidehiko

  NTT Basic Research Laboratories, NTT Corporation

• Kamada Hidehiko

  Ntt Basic Research Laboratories

• ISHIDA Yuzo

  NTT Opto-electronics Laboratories

• NAGANUMA Kazunori

  NTT Opto-electronics Laboratories

関連論文

• Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate ( Quantum Dot Structures)
• Differential Phase Shift Quantum Key Distribution Using 1.3-μm Up-Conversion Detectors
• Multi-sideband Generation in a Femtosecond Cr^:YAG Laser
• Spatially Ordered Self-Assembled Quantum Dots with Uniform Shapes Fabricated by Patterning Nanoscale SiN Islands
• Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots
• Perfect Spatial Ordering of Self-Organized InGaAs/AlGaAs Quantum Disks on GaAs (311)B Substrate with Silicon-Nitride Dot Array
• Prefect Spatial Ordering of Self-Organized InGaAs/AlGaAs Box-Like Structure on GaAs (311)B Substrate with Buried Silicon-Nitride Dot Array
• Effects of Dimensionality on Radiative Recombination Lifetime of Excitons in Thin Quantum Boxes of Intermediate Regime between Zero and Two Dimensions ( Quantum Dot Structures)
• Spatially Ordered Self-Assembled Quantum Dots with Uniform Shapes Fabricated by Patterning Nanoscale SiN Islands
• Distinctive feature of ripening during growth interruption of InGaAs quantum dot epitaxy using Bi as a surfactant (Special issue: Microprocesses and nanotechnology)
• Dependence of Electron $g$-Factor on Barrier Aluminum Content in GaAs/AlGaAs Quantum Wells
• Differential Phase Shift Quantum Key Distribution Using 1.3-μm Up-Conversion Detectors

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