GaAs/AlAs Trench-Buried Quantum Wires (<20 nm×20 nm) Fabricated by Metalorganic Chemical Vapor Deposition on Nonplanar Substrates
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概要
- 論文の詳細を見る
We report the fabrication of quantum wires buried in U-grooved trenches grown by metalorganic chemical vapor deposition on V-grooved (001) substrates. These trench structures with vertical (110) sidewalls were formed as a result of the faceting of (110) planes, and lateral growth of these planes reduced the trench width to less than 20 nm. A cross-sectional scanning electron micrograph shows that these trench-buried structures have GaAs wires of about 20 nm lateral width. Photoluminescence (PL) blue shifts and strong PL anisotropy confirm two-dimensional quantum confinement.
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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ANDO Seigo
NTT Basic Research Laboratories
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Kanbe H
Ntt Basic Res. Lab. Kanagawa Jpn
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Kanbe Hiroshi
Ntt Basic Research Laboratories
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Sogawa T
Ntt Basic Res. Lab. Kanagawa Jpn
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Sogawa Tetsuomi
Ntt Basic Research Laboratories
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Ando S
Ntt Basic Research Laboratories
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