Fabrication of a Nanometer-Scale GaAs Ridge Structure with a 92-MHz Anode-Coupled Reactive Ion Etcher Using Cl_2/N_2 Mixed Plasmas
スポンサーリンク
概要
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A vertical etch profile of GaAs is achieved at a low bias voltage with a 92-MHz anode-coupled reactive ion etcher using chlorine-nitrogen plasmas. The added nitrogen gas not only dilutes the concentration of reactive chlorine radicals in the plasma also plays an important role in the vertical etching of GaAs. XPS analysis reveals no sidewall passivation by nitrogen. Reactive ion etching with a Cl_2/N_2 mixed plasma was used to fabricate ultra-fine GaAs patterns with a nanometer-scale ridge structure having a cross-section 15-nm wide by 150-nm high.
- 社団法人応用物理学会の論文
- 1996-01-01
著者
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SAITOH Tadashi
NTT Basic Research Laboratories, Physical Science Laboratory
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Kanbe Hiroshi
Ntt Basic Research Laboratories
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Saitoh Tadashi
Ntt Basic Research Laboratories
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