Laser Doping Technique for 2-6 Semiconductors,ZnSe and CdTe (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (FED and EL Displays)
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概要
- 論文の詳細を見る
The p-type doping of wide band gap II-VI semiconductors is a key technology for the formation of ohmic contacts with metal electrodes in device fabrication. Using alkaline metal compounds such as Na_2Se or Na_2Te, which contain dopant atoms, laser doping experiments were carried out for ZnSe and CdTe. The influences of laser light treatment on the electrical properties of semiconductors were studied mainly by means of the Hall effect measurements and current-voltage (I-V) characteristics. As a result of p-type doping, the resistivity of ZnSe drastically decreased from 10^5 to 10^<-2> Ω cm and the value of hole carrier concentration increased up to 4.8x10^<19> cm^<-3>. Similarly, for CdTe the resistivity decreased from 10^5 to 10^&llt;-1> Ω cm. Formation of p-type ohmic contact in ZnSe and CdTe diodes was also investigated
- 社団法人電子情報通信学会の論文
- 1999-03-18
著者
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Niraula M.
Graduate School Of Electronic Science And Technology Shizuoka University
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Aoki Toru
Research Institute Of Electronics Shizuoka University
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Hatanaka Yoshinori
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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AOKI T.
Research Information Center, Institute of Plasma Physics, Nagoya University
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Aoki T.
Research Information Center Institute Of Plasma Physics Nagoya University
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Hatanaka Y.
Research Institute of Electronics, Graduate School of Electronic Science and Technology, Shizuoka Un
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Niraula M.
Research Institute of Electronics, Graduate School of Electronic Science and Technology, Shizuoka Un
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Aoki Y.
Research Institute of Electronics, Graduate School of Electronic Science and Technology, Shizuoka Un
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Nakanishi Y.
Research Institute of Electronics, Graduate School of Electronic Science and Technology, Shizuoka Un
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Hatanaka Y.
Shizuoka Univ.
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Hatanaka Y
Shizuoka Univ.
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Niraula M.
Research Institute of Electronics, Graduate School of Electronic Science and Technology, Shizuoka University
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Aoki Toru
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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