Fabrication of CdTe p-i-n diodes for gamma-ray spectroscopy
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概要
- 論文の詳細を見る
CdTe p-i-n diodes were fabricated in a new method for the application in gamma-ray spectroscopy, where the reduction of leakage current is very much necessary to obtain optimum responses. Using a high-resistivity single crystal CdTe substrate, iodine-doped n-CdTe layer was grown homoepitaxially on the Te-face of the crystal using the hydrogen p]asma-radical-assisted metalorganic chemical vapor deposition method at a low substrate temperature of 150℃. Indium electrode was evaporated on n-CdTe layer for n-type contact, whereas a gold electrode on the opposite side acted as a p-type contact. Diodes thus fabricated exhibited good rectification property and were efficient in suppressing leakage current to a very low level. Spectral response of these diode detectors showed improved energy resolution for different gamma-sources.
- 社団法人電子情報通信学会の論文
- 1999-05-21
著者
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Niraula M.
Graduate School Of Electronic Science And Technology Shizuoka University
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Mochizuki D.
Graduate School of Electronic Science and Technology, Shizuoka University
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Aoki T.
Graduate School of Electronic Science and Technology, Shizuoka University
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Tomita Y.
Electron Tube R & D Center, Hamamatsu Photonics K. K.
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Nihashi T.
Electron Tube R & D Center, Hamamatsu Photonics K. K.
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Hatanaka Y.
Graduate School of Electronic Science and Technology, Shizuoka University
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Nihashi T.
Electron Tube R & D Center Hamamatsu Photonics K. K.
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Hatanaka Y.
Shizuoka Univ.
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Hatanaka Y
Shizuoka Univ.
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Mochizuki D.
Graduate School Of Electronic Science And Technology Shizuoka University
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Tomita Y.
Electron Tube R & D Center Hamamatsu Photonics K. K.
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