12-7 High Energy Radiation Detector Using CdTe p-i-n Photodiodes
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概要
- 論文の詳細を見る
Fabricating CdTe radiation detectors in p-i-n structure helps to reduce the leakage current to level lower than that of detectors in metal-semiconductor-metal(MSM) design. Cl-compensated single crystal CdTe were used for the detector fabrication. Iodine doped homepilayers were grown on the one face of the crystal using radical assisted metalorganic chemical vapor deposition technique while p-type layers were formed on the opposite side by impurity diffusion technique employing excimer laser radiation. Devices thus fabricated showed good diode property with low leakage current and good photo-response for x-ray photons.
- 社団法人映像情報メディア学会の論文
- 1998-10-29
著者
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Niraula M.
Graduate School Of Electronic Science And Technology Shizuoka University
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NAKANISHI Y.
Graduate School of Medical Sciences, Kyushu University
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Aoki T.
Graduate School of Electronic Science and Technology, Shizuoka University
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Tomita Y.
Electron Tube R & D Center, Hamamatsu Photonics K. K.
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Nihashi T.
Electron Tube R & D Center, Hamamatsu Photonics K. K.
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Hatanaka Y.
Graduate School of Electronic Science and Technology, Shizuoka University
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Nihashi T.
Electron Tube R & D Center Hamamatsu Photonics K. K.
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Nakanishi Y
Shizuoka Univ. Hamamatsu Jpn
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Hatanaka Y.
Shizuoka Univ.
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Hatanaka Y
Shizuoka Univ.
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Tomita Y.
Electron Tube R & D Center Hamamatsu Photonics K. K.
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