Characteristics of the Hydrogenated Amorphous Silicon-Crystalline Cadmium Telluride Heterojunction Diode
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概要
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The current-voltage characteristics and visible and X-ray photocurrent characteristics have been investigated for a heterojunction diode constructed of plasma-deposited hydrogenated amorphous silicon (a-Si:H) and single crystal cadmium telluride (c-CdTe). Devices showed low reverse bias saturation current, a photoresponse spectrum ranging from approximately 400-800 nm and a 3 decade increase in reverse bias saturation current when exposed to 40 keV X-rays.
- 社団法人応用物理学会の論文
- 1987-11-20
著者
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Hatanaka Yoshinori
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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Meikle Scott
Research Institute Of Electronics Shizuoka University
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Meikle Scott
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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