XPS Studies of a-Si_<1-x>C_x:H Prepared from C_2H_4/SiH_4 Gas Mixtures
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概要
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Hydrogenated amorphous silicon carbon alloy films (a-Si_<1-x>C_x:H) with optical band gap 2.4 eV and x=0.5, deposited in a radio frequency (13.56 MHz) plasma of H_2/C_2H_4/SiH_4 gases have been examined using X-ray photoelectron spectroscopy (XPS). From the Cls and Si2p core level spectra it was found that films grown using a smaller SiH_4/C_2H_4 ratio had a larger concentration of Si-C bonds. Further, spectrum shifts caused by slight Ar sputtering of as-deposited films suggested that the formation of Si-C bond occurs at the surfaces. Finally, valence band spectra showed that films with high Si-C bond density had a steep valence band edge typical of high quality films.
- 社団法人応用物理学会の論文
- 1990-04-20
著者
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Hatanaka Yoshinori
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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Suzuki Yoshiko
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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Fukuda Yasuo
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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MEIKLE Scott
Research Institute of Electronics, Shizuoka University
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Meikle Scott
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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