Fabrication of a GaAs Emitter with a High Aspect Ratio for Generation of Prebunched Electron Beam Using Gunn Effect
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概要
- 論文の詳細を見る
A prebunched electron beam at microwave and millimeter wave frequencies is expected to be generated directly from a field emission cathode by applying the Gunn effect in a compound semiconductor to the cathode. In this paper, we describe the fabrication of a vertical GaAs field emitter with a high aspect ratio by combining wet and dry etching of the GaAs wafer designed for the Gunn effect. The field emission characteristics of the emitter are also described, suggesting the generation of a prebunched beam.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Hasegawa Hideaki
Research Institute Of Electrical Communication Tohoku University
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Hasegawa Hideaki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Yokoo Kuniyoshi
Reseach Institute of Electrical Communication, Tohoku University,
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Mimura Hidenori
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Mimura Hidenori
Reseach Institute of Electrical Communication, Tohoku University,
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