Monolithic Fabrication and Electrical Characteristics of Polycrystalline Silicon Field Emitters and Thin Film Transistor
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概要
- 論文の詳細を見る
We have developed a novel monolithic fabrication method for polycrystalline silicon (poly-Si) field emitters and a poly-Si thin film transistor (TFT). Poly-Si field emitters were fabricated using a mold transfer process, which allows a TFT to be fabricated under the field emitters and saves space for emitter fabrication. We have also demonstrated successful control of the field emission using tire monolithically fabricated TFT.
- 社団法人応用物理学会の論文
- 1996-01-15
著者
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FUJITA Hiroyuki
Institute of Industrial Science, The University of Tokyo
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HASHIGUCHI Gen
Faculty of Engineering, Kagawa University
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Mimura Hidenori
ATR Optical Radio Communications Research Laboratories
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Mimura Hidenori
Research Institute Of Electrical Commnication Tohoku University
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Mimura Hidenori
Graduate School Of Electric Science And Technology Shizuoka University
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Hashiguchi G
Faculty Of Engineering Kagawa University
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Mimura H
Shizuoka University
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Fujita Hiroyuki
Institude Of Industrial Science The University Of Tokyo Fujita Lab.
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HASHIGUCHI Gen
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Mimura Hidenori
ATR Optical and Radio Communications Research Laboratories,
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