Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1985-05-20

著者

• HATANAKA Yoshinori

  Graduate School of Electronic Science and Technology, Shizuoka University

• Mimura Hidenori

  Graduate School Of Electric Science And Technology Shizuoka University

• Mimura Hidenori

  Graduate School Of Electronic Science And Technology Shizuoka University

• Hatanaka Yoshinori

  Graduate School Of Electronic Science And Technology Shizuoka University:research Institute Of Elect

• Hatanaka Yoshinori

  Graduate School Electronic Science And Technology:research Institute Of Electronics Shizuoka Univers

• Mimura Hidenori

  Graduate School Electronic Science And Technology

関連論文

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• Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes
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• Amorphous Silicon Resistive Sea for Silicon Vidicon Targets
• Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p^+-ZnSe by Excimer Laser Doping Technique
• Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions
• Deposition of SiN_x Thin Film Using μ-SLAN Surface Wave Plasma Source
• Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
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• Surface Treatment Effect of (NH4)2Sx on $ p$-type GaAs Field Emitter Arrays
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• A New Concept for the High-Speed Optical Position-Sensitive Devices
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